| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF740AS is an N-Channel power MOSFET from Vishay Siliconix, designed for high-voltage switching applications. It features a maximum drain-source voltage of 400V and a continuous drain current of 10A at 25°C case temperature. The device has a maximum on-resistance of 550mOhm at Vgs = 10V and Id = 6A, ensuring efficient power handling.
This MOSFET offers a gate charge of 36nC maximum at Vgs = 10V, with typical gate-source charge of 9.9nC and gate-drain charge of 16nC. Input capacitance is 1030pF maximum at Vds = 25V. The device is rated for single-pulse avalanche energy of 630mJ, providing ruggedness in inductive switching environments.
The IRF740AS is housed in a D2PAK (TO-263) surface-mount package, with a supplier device package of D²PAK (TO-263). It supports an operating junction temperature range of -55°C to 150°C. Maximum power dissipation is 3.1W at 25°C ambient and 125W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $2.96 | $2.96 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 400V.
The continuous drain current is 10A at Tc = 25°C.
The maximum drain-source on-resistance is 550mOhm at Id = 6A and Vgs = 10V.
The IRF740AS is available in a D2PAK (TO-263) surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The maximum total gate charge is 36nC at Vgs = 10V.