| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7406PBF is a P-Channel enhancement-mode MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for automotive and general-purpose power switching applications. The device offers a maximum drain-source voltage (Vdss) of 30V and a continuous drain current of 5.8A at 25°C ambient temperature. The on-resistance (Rds(on)) is typically 45mOhm with a 10V gate drive, ensuring efficient power conversion.
With a gate charge of 59nC and input capacitance of 1100pF, the IRF7406PBF provides fast switching characteristics suitable for DC-DC converters and load switching circuits. The gate threshold voltage is 1V, allowing low-voltage drive capability. The device is rated for a maximum power dissipation of 2.5W at 25°C and operates over a junction temperature range of -55°C to 150°C.
Packaged in an 8-SOIC (0.154", 3.90mm width) surface mount package, the IRF7406PBF is ideal for space-constrained designs. It is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited), simplifying handling and assembly.
The IRF7406PBF is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The junction operating temperature range is from -55°C to 150°C.
The component is marked as RoHS3 Compliant, but this status is unverified and should be confirmed.
The maximum drain-source voltage (Vdss) is 30V.
The maximum continuous drain current at 25°C ambient is 5.8A.
The maximum gate threshold voltage (Vgs(th)) is 1V at a drain current of 250µA.
The maximum on-resistance is 45mOhm at a gate-source voltage of 10V and drain current of 2.8A.