| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,722 pcs
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3722 pcs | On Request | 1 | On Request | On Request | 0408+ | On Request | On Request | |
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3,385 pcs
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3385 pcs | On Request | 1 | On Request | On Request | 99/00P/ | On Request | On Request |
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The Vishay Dale IRF7404TR is a P-Channel MOSFET suitable for various switching applications. It offers a breakdown voltage of 20V and a maximum continuous drain current of 6.7A. The device exhibits a low maximum on-resistance of 0.04 Ohms, contributing to efficient power handling.
This MOSFET utilizes Metal-Oxide Semiconductor (MOS) technology and operates in enhancement mode. It is configured as a single transistor with a built-in diode. The component is designed for surface mounting and comes in a lead-free SOIC package, specifically described as Lead Free, So-8.
Key electrical characteristics include a maximum pulsed drain current of 27A and a feedback capacitance of 340pF. The operating temperature range is from -55°C to 150°C, with a maximum power dissipation of 1.6W (absolute) and 2.5W (ambient). The component also has a peak reflow temperature rating of 260°C for 30 seconds.
With its logic-level compatibility and P-Channel configuration, the IRF7404TR is a versatile component for power management circuits. Its SOIC package and surface mount capability make it suitable for integration into compact electronic designs.
The minimum breakdown voltage for the IRF7404TR is 20V.
The maximum continuous drain current (ID) for the IRF7404TR is 6.7A.
The maximum drain-source on-resistance for the IRF7404TR is 0.04 Ohms.
The IRF7404TR uses Metal-Oxide Semiconductor FET technology.
Yes, the IRF7404TR is logic level compatible.
The operating temperature range for the IRF7404TR is -55°C to 150°C.
The IRF7404TR is supplied in an SOIC package, described as Lead Free, So-8.