| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,832 pcs
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3832 pcs | On Request | 1 | On Request | On Request | 751 | On Request | On Request |
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The IRF7404QTRPBF is a P-Channel enhancement mode MOSFET from Infineon Technologies, designed for load switching and power management applications. It features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 6.7A at 25°C ambient temperature. The device offers a maximum drain-source on-resistance (Rds(on)) of 40 mΩ at Vgs=4.5V and Id=3.2A, ensuring efficient conduction with low power loss.
This MOSFET is housed in a standard 8-SOIC surface-mount package (0.154" width, 3.90mm body width), making it suitable for compact PCB layouts. It supports a wide operating junction temperature range from -55°C to +150°C, with a maximum power dissipation of 2.5W at 25°C. The gate threshold voltage is 700mV maximum at Id=250µA, allowing logic-level drive compatibility. Total gate charge is 50 nC maximum at Vgs=4.5V, and input capacitance is 1500 pF maximum at Vds=15V.
The device is lead-free and RoHS compliant, suitable for environmentally conscious designs. Typical applications include DC-DC converters, load switches, and battery protection circuits where P-Channel topology simplifies high-side switching.
The maximum drain-source voltage (Vdss) is 20V.
The continuous drain current (Id) is 6.7A at 25°C ambient temperature.
The IRF7404QTRPBF is housed in an 8-SOIC surface-mount package (0.154" width, 3.90mm body width).
The operating junction temperature range is -55°C to +150°C.
The IRF7404QTRPBF is listed as RoHS3 compliant and is lead-free per the datasheet.
The maximum gate threshold voltage is 700mV at Id=250µA.
The maximum on-resistance is 40 mΩ at Vgs=4.5V and Id=3.2A.