TC7SH14FETE85,F
Toshiba
The Toshiba TC7SH14FETE85,F is a logic gate with RoHS3 compliance. It features MSL 1 Unlimited and REACH Unaffected status.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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165 pcs
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165 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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35 pcs
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35 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF7404PBF is a P-Channel enhancement mode MOSFET designed for high-efficiency power management applications. It is rated for a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 12A at a case temperature of 25°C.
This MOSFET offers a low maximum on-resistance (Rds(on)) of 0.075 Ohm at Vgs=10V and Id=12A, and 0.085 Ohm at Vgs=4.5V and Id=12A, enabling efficient switching with reduced conduction losses. The typical gate charge (Qg) is 25 nC, which supports fast switching performance.
The device is housed in a surface-mount TO-263-3 (D2Pak) package with 2 leads plus a tab, suitable for automated assembly processes. It is designed to operate over a junction temperature range of -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 30 V.
The continuous drain current (Id) is 12 A at a case temperature of 25°C.
The maximum on-resistance (Rds(on)) is 0.075 Ohm at Vgs=10V and Id=12A, and 0.085 Ohm at Vgs=4.5V and Id=12A.
The operating junction temperature range is -55°C to 175°C.
The IRF7404PBF is available in a TO-263-3, D2Pak (2 Leads + Tab) surface mount package.