| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,400 pcs
|
6400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7404PBF is a P-Channel enhancement mode MOSFET from Infineon Technologies, designed for load switching and power management applications. It offers a maximum drain-source voltage of 20V and a continuous drain current of 6.7A at ambient temperature. The device features a low on-resistance of 40mOhm maximum at 4.5V gate drive and 3.2A drain current. The gate threshold voltage is a minimum of 700mV, with a maximum gate charge of 50nC at 4.5V. Input capacitance is 1500pF maximum at 15V drain-source voltage. The MOSFET is surface mountable in an 8-SOIC (0.154", 3.90mm Width) package and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 2.5W at ambient temperature. The device is listed as RoHS3 compliant, REACH unaffected, and has an MSL rating of 1 (unlimited) – though these compliance claims are unverified in the available data.
20V.
8-SOIC (0.154", 3.90mm Width).
-55°C to 150°C (junction temperature).
Yes, RoHS3 compliant (status unverified).
700mV minimum at 250µA drain current.
40mOhm at 3.2A drain current and 4.5V gate drive.
50nC at 4.5V gate voltage.