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135 pcs
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135 pcs | On Request | 1 | On Request | On Request | 1008 | On Request | On Request |
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The Vishay Dale IRF7404 is a P-Channel MOSFET suitable for electronic designs requiring efficient switching and power control. This component is housed in a surface-mount SOIC package, facilitating integration into compact circuit boards.
Key electrical specifications include a drain-source breakdown voltage of -20V and a continuous drain current rating of -6.7A. The MOSFET exhibits a maximum on-resistance (RDS(on)) of 40mΩ, ensuring low conduction losses. Its threshold voltage is rated at -700mV, and it has a typical input capacitance of 1.5nF.
Operating within a temperature range of -55°C to 150°C, the IRF7404 is designed for reliability in diverse environmental conditions. The typical rise time is 32ns, and the fall time is 65ns, indicating moderate switching speeds. With a maximum power dissipation of 2.5W, it is suitable for medium-power applications.
This MOSFET is manufactured by Vishay Dale and is part of their HEXFET Power MOSFET family. Its P-channel configuration makes it ideal for applications where a high-side switch or load switching is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -20V.
The IRF7404 is packaged in an 8-terminal SOIC (SOIC-8) surface mount package.
The operating temperature range is from -55C to 150C.
The nominal gate-source threshold voltage is -700mV.
The maximum drain-source on-resistance is 40 milliohms.
This is a single-channel (1) MOSFET.
The maximum power dissipation is 2.5W.