| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30,000 pcs
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30000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7403PBF is an N-Channel enhancement-mode MOSFET manufactured by Infineon Technologies using MOSFET (Metal Oxide) technology. It is designed for switching and power management applications requiring efficient low-voltage operation.
Key electrical specifications include a drain-to-source voltage (Vdss) of 30V, a continuous drain current of 8.5A at ambient temperature, and a maximum drain-source on-resistance of 22mΩ at 4A and 10V gate drive. The device supports a gate-source voltage range of ±20V and has a gate threshold voltage of 1V at 250µA. Input capacitance is 1200pF at 25V, and total gate charge is 57nC at 10V.
The MOSFET is offered in an 8-SOIC (0.154", 3.90mm Width) surface-mount package with a supplier device package designation of 8-SO. It is rated for a maximum power dissipation of 2.5W at ambient temperature and an operating junction temperature range of -55°C to 150°C.
The drain-source voltage (Vdss) is 30V.
The maximum continuous drain current is 8.5A at ambient temperature (Ta).
The maximum drain-source on-resistance is 22mΩ at Id = 4A and Vgs = 10V.
The IRF7403PBF is offered in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 Compliant, but this status is unverified.