IRF7401PBF

The IRF7401PBF is a robust power MOSFET engineered for demanding switching and amplification tasks in industrial and consumer electronics. Rated for a drain-to-source voltage of 400V and a continuous drain current of 10A at 25°C, this component delivers reliable performance under high-load conditions. Its maximum on-resistance of 550mΩ at a 10V gate drive minimizes conduction losses, improving overall system efficiency.

Designed for through-hole mounting, the IRF7401PBF utilizes a TO-220AB package that facilitates effective heat dissipation, supporting a maximum power dissipation of 125W at case temperature. The device maintains an operating junction temperature range of -65°C to 150°C, ensuring stability across diverse environmental conditions. With a gate threshold voltage of up to 4V and a gate charge of 43nC at 10V, it offers straightforward drive requirements for standard logic-level interfaces.

This MOSFET is particularly suited for DC-DC converters, motor control circuits, and power supply designs where high voltage tolerance and thermal resilience are critical. Engineers can integrate it into systems requiring durable single-transistor configurations without compromising on switching speed or thermal management capabilities.