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101 pcs
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101 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF740 is an N-Channel Power MOSFET manufactured by STMicroelectronics. This component is designed for applications requiring the switching of high voltage and high current loads, up to 400V and 10A respectively. It features a low drain-source resistance (Rds(on)) of 550 mOhms and a gate-source voltage range of ±20V.
The MOSFET operates within a temperature range of -65°C to +150°C and has a power dissipation of 125W. Its simple drive requirements and fast switching capabilities make it suitable for various power control applications.
Packaged in a TO-220-3 through-hole configuration, the IRF740 is designed for ease of mounting. Its specifications include a minimum forward transconductance of 4S and a rise time of 10ns, indicating efficient switching performance.
Key electrical characteristics include a drain-source breakdown voltage of 400V and a continuous drain current of 10A. The gate threshold voltage is approximately 10V, requiring a higher gate drive voltage compared to typical logic-level MOSFETs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRF740 can handle a continuous drain current of 10A.
The drain-source breakdown voltage for the IRF740 is 400V.
The drain-source resistance (Rds(on)) for the IRF740 is 550 mOhms.
The IRF740 operates between -65°C and +150°C.
The IRF740 is supplied in a TO-220-3 package.
The gate threshold voltage for the IRF740 is 10V.