| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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110 pcs
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110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4 pcs
|
4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF740 is an N-Channel power MOSFET designed for high-voltage switching applications. It offers a maximum drain-source voltage of 400V and continuous drain current of 10A at 25°C case temperature. The device features a low on-resistance of 0.55Ω at 10V gate drive, ensuring efficient power conversion. With a maximum power dissipation of 125W, it is suitable for moderate power levels. The MOSFET is housed in a standard TO-220AB package with through-hole mounting, providing good thermal performance and ease of assembly. It includes repetitive avalanche rating and fast switching characteristics, making it ideal for switch-mode power supplies and motor control circuits. The device is available in lead-free (IRF740PbF) and halogen-free (IRF740PbF-BE3) variants per the datasheet.
The maximum drain-source voltage (Vdss) is 400V.
The continuous drain current is 10A at 25°C case temperature, derated to 6.3A at 100°C.
The IRF740 is available in a TO-220-3 (TO-220AB) through-hole package.
The junction temperature range is -55°C to 150°C.
The IRF740PbF variant is lead-free and halogen-free per the datasheet. RoHS3 compliance is listed but unverified.
The maximum drain-source on-resistance is 0.55Ω at 6A drain current and 10V gate-source voltage.
The maximum gate threshold voltage is 4V at a drain current of 250µA.