| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,216 pcs
|
6216 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF7389TRPBF is a dual N and P-Channel MOSFET manufactured by Infineon Technologies. It features a drain-source voltage (Vdss) of 30V and a maximum power dissipation of 2.5W. The device is designed with logic level gate technology, enabling it to be driven by low-voltage logic signals.
Electrical characteristics include a maximum on-resistance (Rds(on)) of 29 mOhm at Vgs = 10V and Id = 5.8A, a maximum gate charge (Qg) of 33 nC at Vgs = 10V, and a maximum gate threshold voltage (Vgs(th)) of 1V at Id = 250µA. The input capacitance (Ciss) is 650 pF at Vds = 25V.
The MOSFET is surface mounted in an 8-SOIC package (0.154", 3.90mm Width) with a supplier device package of 8-SO. It operates over a junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.42 | $1.42 |
| 10+ | $0.89 | $0.89 |
| 50+ | $0.66 | $0.66 |
| 100+ | $0.59 | $0.59 |
| 500+ | $0.46 | $0.46 |
| 4,000+ | $0.35 | $0.35 |
| 12,000+ | $0.31 | $0.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 30V.
It comes in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, it is marked as RoHS3 Compliant.
The maximum on-resistance (Rds(on)) is 29 mOhm at Vgs = 10V and Id = 5.8A.
Yes, it features a logic level gate with a maximum threshold voltage of 1V at Id = 250µA.
The maximum power dissipation is 2.5W.