IRF7380TRPBF IRF7380TRPBF is a dual N-Channel MOSFET from Infineon Technologies, with 80V drain-source voltage and 3.6A continuous drain current. Housed in an 8-SOIC package for surface mount applications.
Mfr Part #:

IRF7380TRPBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRF7380TRPBF is a dual N-Channel MOSFET from Infineon Technologies, with 80V drain-source voltage and 3.6A continuous drain current. Housed in an 8-SOIC package for surface mount applications.
✓ Total Stock: 160 pcs
$ Price Range: $0.36 - $1.58

IRF7380TRPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
100 pcs
100 pcs On Request 1 On Request On Request NO DC On Request On Request
Non-Authorised Inventory information
60 pcs
60 pcs On Request 1 On Request On Request On Request On Request On Request

IRF7380TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

IRF7380TRPBF Description

Short technical summary and product information.

The IRF7380TRPBF is a dual N-Channel power MOSFET from Infineon Technologies, part of the HEXFET series. It features a drain-source voltage rating of 80V and a continuous drain current of 3.6A at 25°C (2.9A at 100°C). The device offers a low on-resistance of 73 mOhm maximum at Vgs=10V, with a typical gate charge of 15 nC, enabling efficient high-frequency switching.

 

Designed for high frequency DC-DC converters, the IRF7380TRPBF provides fully characterized capacitance and avalanche energy ratings. The logic level gate allows direct drive from low-voltage control signals. Switching times are fast with typical turn-on delay of 9 ns and rise time of 10 ns.

 

The MOSFET is packaged in a standard 8-SOIC (0.154", 3.90mm width) surface mount package, suitable for automated assembly. Operating temperature range is -55°C to 150°C. The device is lead-free and marked as RoHS compliant (unverified).

IRF7380TRPBF Quick Information

Product Type: MOSFET Array
Series: HEXFET
Canonical Name: Infineon IRF7380TRPBF Dual N-Channel MOSFET
Subcategory: Dual N-Channel

IRF7380TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free (PbF suffix)

IRF7380TRPBF Estimated Pricing

Qty Low High
1+ $1.58 $1.58
10+ $1.00 $1.00
50+ $0.74 $0.74
100+ $0.66 $0.66
500+ $0.52 $0.52
4,000+ $0.40 $0.40
12,000+ $0.36 $0.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7380TRPBF Features

  • Dual N-Channel configuration with logic level gate.
  • 80V drain-source breakdown voltage.
  • Low on-resistance: 73 mOhm maximum.
  • Surface mount 8-SOIC package.
  • Fast switching with low gate charge.

IRF7380TRPBF Applications

  • High frequency DC-DC converters.
  • Power management systems.
  • Battery powered circuits.
  • Load switching applications.

IRF7380TRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF7380TRPBF?

The drain-source voltage rating is 80V.

What package does the IRF7380TRPBF come in?

It comes in an 8-SOIC (0.154", 3.90mm Width) package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IRF7380TRPBF RoHS compliant?

Our data flags it as RoHS3 compliant, but this is unverified. Please confirm with the manufacturer.

What is the continuous drain current at 25°C?

The continuous drain current is 3.6A at 25°C (2.9A at 100°C).

What is the gate threshold voltage range?

The gate threshold voltage ranges from 2.0V to 4.0V (tested at Id=250µA).

What is the maximum on-resistance?

The maximum static drain-to-source on-resistance is 73 mOhm at Vgs=10V, Id=2.2A.

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