| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
600 pcs
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600 pcs | On Request | 1 | On Request | On Request | 114 | On Request | On Request |
| Category | |
| Manufacturer Name |
The IRF737LCSTRR from Vishay Siliconix is an N-Channel MOSFET designed for power switching applications. It features a maximum drain-to-source voltage (Vdss) of 300V and a continuous drain current (Id) of 6.1A at 25°C.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4V at 250µA and a maximum gate-source voltage of ±30V. The on-resistance (Rds On) is specified at a maximum of 750mOhm at 3.7A and 10V gate drive. Input capacitance (Ciss) is 430pF at 25V, and gate charge (Qg) is 17nC at 10V.
This MOSFET utilizes MOSFET (Metal Oxide) technology and is housed in a D2PAK (TO-263) surface mount package. The mounting type is surface mount, and it is available on tape and reel (TR).
Environmental compliance indicates RoHS non-compliant status and MSL 1 Unlimited. REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the IRF737LCSTRR is 300V.
The continuous drain current (Id) at 25°C is 6.1A (Tc).
The maximum on-resistance (Rds On) is 750mOhm at 3.7A and 10V gate drive.
The IRF737LCSTRR is an N-Channel MOSFET.
The IRF737LCSTRR is supplied in a D2PAK (TO-263) package.
The IRF737LCSTRR is a surface mount device.
The IRF737LCSTRR is RoHS non-compliant.