| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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63 pcs
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63 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF7351TRPBF is a dual N-channel power MOSFET from Infineon Technologies. It is designed for synchronous rectification in isolated DC-DC converters and low power motor drive systems. The device integrates two N-channel MOSFETs in a compact 8-SOIC surface-mount package with logic-level gate drive.
Electrical ratings include a 60V drain-to-source breakdown voltage, continuous drain current of 8A at 25°C ambient and 6.4A at 70°C, and pulsed drain current up to 64A. Maximum on-resistance is 17.8mΩ at VGS=10V and ID=8A, with a typical value of 13.7mΩ. Gate threshold voltage ranges from 2.0V to 4.0V, and total gate charge is 24nC typical (36nC maximum) at VGS=10V.
The device is fully characterized for avalanche operation, with single pulse avalanche energy of 325mJ and avalanche current of 6.4A. Switching times include typical turn-on delay of 5.1ns, rise time 5.9ns, turn-off delay 17ns, and fall time 6.7ns. Input, output, and reverse transfer capacitances are 1330pF, 190pF, and 92pF respectively at VDS=30V.
Operating junction temperature range is -55°C to +150°C. Maximum power dissipation is 2W at 25°C ambient, derating to 1.28W at 70°C. Thermal resistance from junction to ambient is 62.5°C/W, and junction to drain lead is 20°C/W. The part is supplied in an 8-SOIC package with supplier device package designation 8-SO.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.30 | $2.30 |
| 10+ | $1.47 | $1.47 |
| 50+ | $1.11 | $1.11 |
| 100+ | $1.00 | $1.00 |
| 500+ | $0.80 | $0.80 |
| 4,000+ | $0.63 | $0.63 |
| 12,000+ | $0.58 | $0.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 60V minimum at 25°C.
It is rated for 8A continuous drain current at 25°C and 6.4A at 70°C with VGS=10V.
Maximum on-resistance is 17.8mΩ at VGS=10V and ID=8A; typical is 13.7mΩ.
Yes, it features a logic-level gate with a threshold voltage of 2.0V to 4.0V and a maximum gate-to-source voltage rating of ±20V.
The junction temperature range is -55°C to +150°C, and the storage temperature range is also -55°C to +150°C.
It is available in a surface-mount 8-SOIC package (0.154", 3.90mm width), also designated as 8-SO.
The product data lists the part as RoHS3 compliant.