| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,500 pcs
|
5500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Current | |
| Avalanche Energy | |
| Breakdown Voltage Temperature Coefficient | |
| Configuration | |
| Continuous Source Current (Body Diode) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage | |
| Drain-Source Leakage Current (Maximum @ VDS=60 V, VGS=0 V, TJ=25 °C) | |
| FET Feature | |
| Fall Time | |
| Forward Transconductance | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Threshold Voltage Coefficient | |
| Gate-Source Voltage | |
| Gate-to-Drain Charge | |
| Gate-to-Source Charge (Post-Vth) | |
| Gate-to-Source Charge (Pre-Vth) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Output Charge | |
| Power | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Transfer Capacitance | |
| Rise Time | |
| Storage Temperature | |
| Supplier Device Package | |
| Switch Charge | |
| Technology | |
| Thermal Resistance Junction-to-Ambient | |
| Thermal Resistance, Junction to Lead | |
| Turn-Off Delay Time | |
| Turn-On Delay Time | |
| Vgs(th) (Max) @ Id | |
| continuous_drain_current (Maximum @ Vgs=10 V, Ta=70 °C) | |
| drain_source_leakage_current (Maximum @ VDS = -60 V, VGS = 0 V, Tj = 125 °C) | |
| gate_source_leakage_current (Maximum @ Vgs = -20 V) | |
| power_dissipation (Maximum @ TA=70 °C) |
The IRF7351PBF is a dual N-channel power MOSFET from Infineon Technologies, designed for efficient power switching in space-constrained applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 8A at 25°C (6.4A at 70°C). The device offers a low typical on-resistance of 13.7mΩ (17.8mΩ maximum) at Vgs=10V, enabling high efficiency in synchronous rectification and motor drive circuits.
The MOSFET incorporates a logic level gate, allowing direct drive from 5V logic sources. It is fully characterized for avalanche energy (325mJ typical) and current (6.4A typical), ensuring robust operation in inductive switching environments. The device is housed in an industry-standard 8-SOIC surface-mount package (0.154", 3.90mm width), suitable for automated assembly.
Typical applications include synchronous rectifier MOSFETs for isolated DC-DC converters and low power motor drive systems. The IRF7351PBF is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $4.22 | $4.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
8-SOIC (0.154", 3.90mm Width).
-55°C to 150°C (junction).
Yes, RoHS3 compliant (unverified).
13.7mΩ typical, 17.8mΩ maximum at Vgs=10V, Id=8A.
2.0V minimum, 4.0V maximum.
8A at 25°C, 6.4A at 70°C.