| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF7343PBF is a dual MOSFET array from Infineon Technologies, combining an N-Channel and a P-Channel MOSFET in a single 8-SOIC surface-mount package. This configuration is ideal for space-constrained designs requiring complementary switching pairs.
Key electrical specifications include a maximum drain-source breakdown voltage of 55V for both channels. The N-Channel MOSFET supports a maximum drain current of 4.7A, while the P-Channel supports 3.4A. The maximum drain-source on-resistance is 50mOhm at 4.7A and 10V gate drive. The device features a maximum gate charge of 36nC at 10V and a maximum gate threshold voltage of 1V at 250µA drain current. Input capacitance is 740pF at 25V drain-source voltage.
The device is designed for surface-mount assembly in an 8-SOIC package with a supplier device package of 8-SO. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2W.
| Qty | Low | High |
|---|---|---|
| 3,800+ | $0.36 | $0.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The IRF7343PBF is offered in an 8-SOIC (0.154", 3.90mm Width) surface-mount package with a supplier device package of 8-SO.
The IRF7343PBF operates over a junction temperature range of -55°C to 150°C.
The IRF7343PBF is listed as RoHS3 Compliant.
The N-Channel MOSFET has a maximum drain current of 4.7A, and the P-Channel MOSFET has a maximum drain current of 3.4A.
The maximum drain-source on-resistance is 50mOhm at a drain current of 4.7A and a gate-source voltage of 10V.
The maximum gate threshold voltage is 1V at a drain current of 250µA.
