| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,670 pcs
|
17670 pcs | On Request | 1 | On Request | On Request | 2021+ | On Request | On Request | |
|
9,020 pcs
|
9020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF7342TRPBF is a dual P-channel power MOSFET from Infineon Technologies, part of the HEXFET Generation V family. It features a drain-to-source breakdown voltage of -55 V and a continuous drain current of -3.4 A at 25°C. The device offers ultra-low on-resistance, with a typical Rds(on) of 0.095 Ω at Vgs = -10 V and 0.15 Ω at Vgs = -4.5 V.
The MOSFET is designed for surface-mount applications and is housed in an 8-SOIC package. It supports logic-level gate drive and includes fast switching characteristics. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 2 W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.69 | $1.69 |
| 10+ | $1.07 | $1.07 |
| 50+ | $0.80 | $0.80 |
| 100+ | $0.71 | $0.71 |
| 500+ | $0.56 | $0.56 |
| 4,000+ | $0.44 | $0.44 |
| 12,000+ | $0.39 | $0.39 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -55 V (minimum).
The device is supplied in an 8-SOIC (0.154", 3.90mm Width) package for surface mount mounting.
The operating junction temperature range is -55°C to 150°C.
The part is designated lead-free in the datasheet. RoHS compliance is unverified but indicated.
The typical drain-to-source on-resistance is 0.095 Ω at Vgs = -10 V and Id = -3.4 A.
The pulsed drain current is -27 A maximum.
The gate threshold voltage is a minimum of -1 V (tested at Vds=Vgs, Id=-250 µA).