| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-to-Source Voltage | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction and Storage Temperature Range | |
| Lead Spacing | |
| Lead Style | |
| Maximum Junction-to-Ambient Thermal Resistance | |
| Mounting Type | |
| Peak Diode Recovery dv/dt | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum @ Tc=70 °C) | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Single Pulse Avalanche Energy | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| continuous_drain_current (Maximum @ Tc = +70 °C, Vgs = -10 V) | |
| continuous_drain_current (Maximum @ Tc = 25 °C, Vgs = -10 V) |
The IRF7342QTRPBF is a dual P-Channel HEXFET Power MOSFET manufactured by Infineon Technologies. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, making it suitable for a variety of power management applications.
This device features a maximum drain-to-source voltage (Vdss) of -55V and a continuous drain current of -3.4A at 25°C. The maximum on-resistance (Rds(on)) is 0.105Ω at VGS=10V and ID=3.4A. It also features a logic level gate, allowing for direct drive from low-voltage logic. The maximum power dissipation is 2.0W at 25°C case temperature.
The IRF7342QTRPBF is housed in a surface-mount 8-SOIC package (0.154", 3.90mm Width) with a supplier device package of 8-SO. It is designed for an operating junction temperature range of -55°C to +150°C. The device is available in tape and reel packaging.
The maximum drain-to-source voltage (Vdss) is -55V.
The maximum continuous drain current is -3.4A at TC=25°C with VGS=10V.
The maximum on-resistance is 0.105Ω at ID=3.4A and VGS=10V.
The device is housed in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The junction and storage temperature range is -55°C to +150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be treated as low confidence.