| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF7342PBF is a dual P-channel logic-level power MOSFET from Infineon Technologies (formerly International Rectifier). It integrates two independent P-channel HEXFET power MOSFETs in a single 8-SOIC surface-mount package, enabling space-efficient power switching and load management in negative supply and high-side switching applications.
Key electrical ratings include a drain-source voltage (Vdss) of -55V and up to -3.4A continuous drain current (at Vgs=-10V, Tc=25°C), with pulsed drain current capability of -27A. The on-resistance at Vgs=-10V and Id=-3.4A is a maximum of 0.105 Ohms, with a typical value of 0.095 Ohms. The logic-level gate (Vgs(th) max 1V at Id=-250µA) allows direct drive from low-voltage logic circuits. For driving applications requiring up to ±20V gate voltage, the device offers gate charge (Qg) of 38 nC typical. The device is rated for operation from -55°C to +150°C junction temperature and provides a maximum power dissipation of 2W at 25°C (1.3W at 70°C).
Designed for efficient and reliable power management, the dual die configuration reduces board space and component count. The package supports standard surface-mount assembly processes and is supplied in tape and reel (4000 pieces per reel). This device is lead-free and RoHS3 compliant per manufacturer documentation.
The maximum drain-source voltage is -55V.
The maximum continuous drain current is -3.4A with Vgs=-10V at Tc=25°C.
On-resistance is 0.105 Ohm maximum at Vgs=-10V, Id=-3.4A; 0.170 Ohm maximum at Vgs=-4.5V, Id=-2.7A. Typical value is 0.095 Ohm.
The operating junction temperature range is from -55°C to 150°C.
Yes, it is designated as RoHS3 compliant and lead-free per the datasheet.
It is supplied in an 8-SOIC (0.154 inch, 3.90mm width) surface-mount package.
The maximum gate threshold voltage is 1V at a drain current of -250µA.