| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy | |
| Configuration | |
| Current | |
| Drain Current - Continuous (Nominal @ Tc=70 °C, Vgs=10 V) | |
| Drain Current, Pulsed | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-source breakdown voltage | |
| FET Feature | |
| Forward Transconductance | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate to Source Voltage (Maximum @ Single pulse tp<10 µs) | |
| Gate to Source Voltage (Maximum @ Steady state) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Linear Derating Factor | |
| Mounting Type | |
| On Resistance (Typical/Maximum @ Vgs=4.5 V, Id=3.8 A) | |
| Operating Temperature | |
| Peak Diode Recovery dv/dt | |
| Power | |
| Power Dissipation (Nominal @ Tc=70 °C) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Thermal Resistance Junction-to-Ambient | |
| Vgs(th) (Max) @ Id |
The IRF7341TRPBF is a dual N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source voltage rating of 55V and a continuous drain current of 4.7A at 25°C with Vgs of 10V. The on-resistance is typically 43mΩ and maximum 50mΩ at Vgs=10V and Id=4.7A, with logic-level gate drive capability.
The device is housed in an 8-SOIC surface-mount package (8-SO supplier package). It offers fast switching performance and is designed for automated assembly processes including reflow and wave soldering. The dual-MOSFET configuration reduces board space in applications requiring two independent N-Channel FETs.
Key electrical characteristics include a gate threshold voltage of 1.0V minimum, input capacitance of 740pF maximum at Vds=25V, and total gate charge of 36nC maximum at Vgs=10V. The device can handle pulsed drain currents up to 38A and features an avalanche energy rating of 72mJ single pulse. The operating junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.22 | $1.22 |
| 10+ | $0.77 | $0.77 |
| 50+ | $0.57 | $0.57 |
| 100+ | $0.50 | $0.50 |
| 500+ | $0.39 | $0.39 |
| 4,000+ | $0.31 | $0.31 |
| 12,000+ | $0.28 | $0.28 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 55V.
The continuous drain current is 4.7A at 25°C with Vgs = 10V.
The device is available in an 8-SOIC surface-mount package (8-SO supplier package).
The operating junction and storage temperature range is -55°C to 150°C.
The typical on-resistance is 43mΩ and maximum 50mΩ at Vgs=10V and Id=4.7A.
The part is listed as RoHS3 compliant but this is unverified; treat as low confidence.