| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Continuous Drain Current (Maximum @ TA = +70 °C, VGS = 10 V) | |
| Continuous Drain Current (Maximum @ TA=+25 °C, VGS=-10 V) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source On-Resistance (Maximum @ VGS=4.5 V, ID=4.42 A) | |
| FET Feature | |
| Forward Transconductance (Typical) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-Source Voltage (Max) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction to Ambient Thermal Resistance | |
| Maximum Power Dissipation (Maximum @ TA=70 °C) | |
| Mounting Type | |
| Operating Junction Temperature Range | |
| Power | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Single Pulse Avalanche Energy | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF7341QTRPBF is a dual N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It is designed for general-purpose power switching applications requiring two independent MOSFETs in a single compact surface-mount package. The device integrates two N-channel MOSFETs with a drain-source breakdown voltage of 55V and a maximum continuous drain current of 5.1A at 25°C ambient temperature.
Key electrical characteristics include a maximum on-resistance of 50mΩ at VGS=10V and ID=5.1A, and 65mΩ at VGS=4.5V and ID=4.42A, enabling efficient low-voltage operation. The gate threshold voltage is a minimum of 1V at ID=250µA, supporting logic-level gate drive. The device features a total gate charge of 44nC at VGS=10V and an input capacitance of 780pF at VDS=25V, contributing to fast switching performance.
The MOSFET is rated for a junction temperature range of -55°C to +175°C and has a maximum power dissipation of 2.4W at 25°C ambient. It is packaged in an 8-SOIC (0.154", 3.90mm width) surface-mount package with a supplier device package designation of 8-SO. The device is lead-free and RoHS compliant.
The maximum drain-source voltage (Vdss) is 55V.
The continuous drain current is 5.1A at TA=25°C with VGS=10V.
The maximum on-resistance is 50mΩ at VGS=10V and ID=5.1A, and 65mΩ at VGS=4.5V and ID=4.42A.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The operating junction temperature range is -55°C to +175°C.
The device is marked as RoHS3 compliant and is lead-free, though the RoHS status is unverified from official certification.