| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,900 pcs
|
2900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Continuous Drain Current (Maximum @ T_C=70 °C, V_GS=10 V) | |
| Current | |
| Drain Source On Resistance (Typical/Maximum @ V_GS=10 V, I_D=4.7 A) | |
| Drain Source On Resistance (Typical/Maximum @ V_GS=4.5 V, I_D=3.8 A) | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-Source Breakdown Voltage (V(BR)DSS) | |
| FET Feature | |
| Forward Transconductance (g_FS) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Threshold Voltage (Minimum/Maximum @ V DS = V GS , I D = 250 µA) | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction to Ambient Thermal Resistance (RθJA) | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Peak Diode Recovery dv/dt | |
| Power | |
| Power Dissipation (Maximum @ T_C=70 °C) | |
| Pulsed Drain Current (I_DM) | |
| Rds On (Max) @ Id, Vgs | |
| Single Pulse Avalanche Energy (E_AS) | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs(th) (Max) @ Id |
The IRF7341PBF from Infineon Technologies is a dual N-Channel HEXFET power MOSFET featuring fifth generation technology for ultra-low on-resistance and fast switching. It is designed for surface mount applications in a compact 8-SOIC (8-SO) package. The device offers a drain-to-source voltage of 55V and a continuous drain current of 4.7A at 25°C case temperature (3.8A at 70°C). Gate threshold voltage is 1.0V typical, enabling logic-level drive. The on-resistance is typically 0.043Ω with Vgs=10V and 0.056Ω with Vgs=4.5V. Input capacitance is 740 pF and total gate charge is 36 nC. The device supports pulsed drain current up to 38A and single pulse avalanche energy of 72 mJ. Operating junction temperature range is -55°C to 150°C. The package is available in tape and reel for automated assembly.
55V
4.7A
0.043Ω
8-SOIC (0.154", 3.90mm Width) also known as supplier device package 8-SO
-55°C to 150°C (junction)
RoHS3 Compliant (low confidence, unverified) and lead-free as stated in datasheet
1.0V minimum and 1.0V maximum (at Vds=Vgs, Id=250µA)