| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,020 pcs
|
5020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Avalanche Current (I_AR) | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate to Source Voltage (Vgs) | |
| Halogen Free | |
| Id - Continuous Drain Current (Maximum @ TA=70 °C, VGS=10 V) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Linear Derating Factor | |
| Mounting Type | |
| Operating Temperature | |
| P_D - Maximum Power Dissipation (Maximum @ TA=70 °C) | |
| Package Code | |
| Packaging Form | |
| Power | |
| Pulsed Drain Current (Idm) | |
| Rds On (Max) @ Id, Vgs | |
| Rds(on) - Drain-Source On-Resistance (Maximum @ Id=4.42 A, Vgs=4.5 V) | |
| SVHC Present | |
| Single Pulse Avalanche Energy (E_AS) | |
| Standard Package Quantity (Tape/Reel) | |
| Standard Package Quantity (Tube) | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance (RθJA) | |
| Vgs(th) (Max) @ Id |
The IRF7341GTRPBF is a dual N-Channel power MOSFET manufactured by Infineon Technologies. It is part of the HEXFET family and utilizes advanced process technology to achieve low on-resistance per silicon area. The device is configured as two independent N-Channel MOSFETs in a single SO-8 package, enabling space-efficient designs.
Key electrical specifications include a maximum drain-source voltage (Vds) of 55V, continuous drain current (Id) of 5.1A at 25°C (4.2A at 70°C), and a maximum drain-source on-resistance (Rds(on)) of 50mΩ at Vgs=10V and 65mΩ at Vgs=4.5V. The gate threshold voltage (Vgs(th)) is 1V minimum at Id=250µA. The device also features a maximum gate charge (Qg) of 44nC at Vgs=10V and input capacitance (Ciss) of 780pF at Vds=25V.
The MOSFET supports a junction temperature range of -55°C to 175°C and is rated for repetitive avalanche up to Tjmax. Maximum power dissipation is 2.4W at 25°C ambient, derating at 16mW/°C. The device is lead-free and RoHS compliant.
The IRF7341GTRPBF is supplied in a surface-mount SO-8 (8-SOIC) package with a tape and reel packaging option (4000 units per reel) or tube (95 units). It is suitable for a variety of power applications including DC-DC converters, load switches, and power management circuits where dual MOSFETs are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.49 | $2.49 |
| 10+ | $1.60 | $1.60 |
| 50+ | $1.21 | $1.21 |
| 100+ | $1.09 | $1.09 |
| 500+ | $0.87 | $0.87 |
| 4,000+ | $0.69 | $0.69 |
| 12,000+ | $0.65 | $0.65 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55V.
8-SOIC (0.154", 3.90mm Width) surface-mount package, also known as SO-8.
-55°C to 175°C.
Yes, it is RoHS3 compliant and lead-free.
Maximum 50mΩ at Vgs=10V and Id=5.1A, and 65mΩ at Vgs=4.5V and Id=4.42A.
Maximum 44nC at Vgs=10V.
42A.