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950 pcs
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950 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay IRF7341 is a Dual N-Channel MOSFET belonging to the HEXFET Power MOSFET family. It is designed for a wide variety of applications requiring efficient and reliable performance.
Key electrical specifications include a breakdown voltage of 55V and a continuous current rating of 4.7A. The on-resistance (RDS(on) max) is 50mΩ, and the input capacitance is 740pF. It offers fast switching speeds with a rise time of 3.2ns and a fall time of 13ns.
This MOSFET is housed in a surface-mount SOIC package, making it suitable for compact designs. The operating temperature range is from -55°C to 150°C, with a maximum power dissipation of 2W. The device is designed with enhanced thermal characteristics and multiple-die capability.
Applications benefit from the ruggedized device design and efficient power handling capabilities of the HEXFET technology. The IRF7341 is ideal for various power applications where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage of the IRF7341 MOSFET is 55V.
The IRF7341 has a maximum continuous current rating of 4.7A.
The maximum on-resistance for the IRF7341 is 50mΩ.
The IRF7341 operates within a temperature range of -55°C to 150°C.
The IRF7341 MOSFET is supplied in a SOIC package.
The IRF7341 MOSFET is designed for surface mounting.