| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,683 pcs
|
6683 pcs | On Request | 1 | On Request | On Request | 14 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The Vishay Dale IRF7329PbF is a P-Channel HEXFET power MOSFET utilizing advanced trench technology for ultra low on-resistance. This device is designed for high efficiency and reliability in various applications.
Key electrical specifications include a maximum drain-source voltage (VDS) of -12V. The continuous drain current (ID) is rated at -9.2A at 25°C and -7.4A at 70°C when VGS is -4.5V. The on-resistance (RDS(on)) is as low as 17mΩ at VGS = -4.5V and ID = -9.2A.
This MOSFET operates within a junction and storage temperature range of -55°C to +150°C. It features a low profile SO-8 package suitable for surface mounting. The device is also lead-free and available in tape and reel packaging.
Applications benefit from its efficient power handling and compact package, making it suitable for power management solutions where space and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the IRF7329PbF is -12V.
The continuous drain current (ID) at 25°C with VGS at -4.5V is -9.2A.
The on-resistance (RDS(on)) is a maximum of 17mΩ at VGS = -4.5V and ID = -9.2A.
The junction and storage temperature range is -55°C to +150°C.
The IRF7329PbF is supplied in an SO-8 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
