| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,569 pcs
|
3569 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Leakage Current (IDSS) | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-Source On-Resistance (Maximum @ ID = 4.6 A, VGS = -1.8 V) | |
| Drain-to-Source On-Resistance (Maximum @ ID = 7.4 A, VGS = -2.5 V) | |
| FET Feature | |
| Forward Transconductance (gfs) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate to Source Voltage (Vgs) | |
| Gate-to-Source Leakage Current (IGSS) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Linear Derating Factor | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Pulsed Drain Current (Idm) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction to Ambient (RθJA) | |
| Thermal Resistance Junction to Lead (RθJL) | |
| Vgs(th) (Max) @ Id |
The IRF7329PBF is a dual P-channel MOSFET from Infineon Technologies, originally developed by International Rectifier. It utilizes advanced Trench technology to achieve ultra-low on-resistance while maintaining a compact form factor. The device is rated for a maximum drain-to-source voltage of 12V and a continuous drain current of 9.2A at 25°C. On-resistance is specified at multiple gate drive voltages: 17mΩ at 4.5V, 21mΩ at 2.5V, and 30mΩ at 1.8V, making it suitable for logic-level gate drive applications.
The MOSFET has a total gate charge of 57nC at 4.5V and an input capacitance of 3450pF at 10V. The gate threshold voltage ranges from 0.4V to 0.9V, ensuring compatibility with low-voltage control signals. Operating junction temperature spans -55°C to 150°C, with a maximum power dissipation of 2W at 25°C ambient.
Packaged in an 8-SOIC (0.154", 3.90mm Width) surface-mount package, the device features a customized leadframe for enhanced thermal performance. The low profile (less than 1.8mm) is ideal for space-constrained designs. It is available in tape and reel packaging for automated assembly. The part is Lead-Free as per the datasheet and listed as RoHS3 Compliant.
12V maximum.
8-SOIC (0.154", 3.90mm Width).
-55°C to 150°C (junction).
The datasheet indicates the device is Lead-Free, and it is listed as RoHS3 Compliant (unverified).
At 4.5V: 17mΩ; at 2.5V: 21mΩ; at 1.8V: 30mΩ.
Continuous drain current: -9.2A at 25°C, -7.4A at 70°C; pulsed drain current: -37A.
Junction-to-ambient: 62.5°C/W; junction-to-lead: 20°C/W.