| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
20,000 pcs
|
20000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 2021+ | On Request | On Request | |
|
1,300 pcs
|
1300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
45 pcs
|
45 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs(th) (Max) @ Id |
The IRF7328TRPBF is a dual P-Channel power MOSFET from Infineon Technologies, utilizing advanced trench HEXFET technology to achieve ultra-low on-resistance per silicon area. Each MOSFET is rated for a maximum drain-to-source voltage of -30V and continuous drain current of -8.0A at 25°C ambient temperature. The on-resistance is typically 21mΩ at VGS=-10V and 32mΩ at VGS=-4.5V, enabling efficient power management in battery-powered and load-switching applications.
The device features logic level gate drive with a gate threshold voltage range of -1.0V to -2.5V, allowing direct interface with low-voltage control signals. Switching characteristics include typical turn-on delay of 13ns and turn-off delay of 198ns, making it suitable for moderate-speed switching applications. The MOSFETs are housed in a standard 8-SOIC surface-mount package with gull wing leads, supporting automated assembly processes.
Typical applications include battery management, load switching, power distribution, and DC-DC converter circuits where dual P-Channel devices simplify board layout. The part is lead-free and available in tape and reel packaging for high-volume production.
The drain-to-source breakdown voltage is -30V (minimum) at VGS=0V and ID=-250µA.
The continuous drain current is -8.0A at TA=25°C with VGS=-10V, and -6.4A at TA=70°C.
The maximum on-resistance is 21mΩ at VGS=-10V and ID=-8A, and 32mΩ at VGS=-4.5V and ID=-6.8A.
The operating junction temperature range is -55°C to 150°C.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package, also referred to as 8-SO.
The part is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.
The gate threshold voltage ranges from -1.0V (minimum) to -2.5V (maximum) at VDS=VGS and ID=-250µA.