| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage Temp. Coefficient | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source On-Resistance (Maximum @ VGS = -1.8 V, ID = -3.9 A) | |
| Drain-Source On-Resistance (Maximum @ VGS = -2.5 V, ID = -6.2 A) | |
| Drain-to-source breakdown voltage | |
| FET Feature | |
| Forward Transconductance | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-to-Source Voltage | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Linear Derating Factor | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Charge | |
| Reverse Recovery Time | |
| Source-Drain Diode Forward Voltage | |
| Supplier Device Package | |
| Technology | |
| Termination Style | |
| Thermal Resistance Junction-to-Ambient | |
| Thermal Resistance Junction-to-Drain Lead | |
| Vgs(th) (Max) @ Id | |
| drain_current_continuous (Maximum @ TA = 70 °C, VGS = -4.5 V) | |
| drain_current_continuous (Maximum @ TA=25 °C, VGS=-4.5 V) | |
| power_dissipation (Maximum @ TA=70 °C) |
The IRF7325 is a dual P-channel power MOSFET from Infineon Technologies, utilizing advanced HEXFET trench technology. It is designed for applications requiring low on-resistance and high efficiency in a compact surface-mount package.
Key electrical specifications include a maximum drain-source voltage of -12V, continuous drain current of -7.8A at 25°C (derated to -6.2A at 70°C), and pulsed drain current capability up to -39A. The on-resistance is typically 24mΩ at VGS = -4.5V, with lower gate drive options: 33mΩ at -2.5V and 49mΩ at -1.8V. The gate threshold voltage ranges from -0.40V to -0.90V, making it suitable for logic-level gate drive. Total gate charge is 33nC at -4.5V, and input capacitance is 2020pF at VDS = -10V.
The device is housed in an 8-SOIC package with a low profile (<1.8mm) and is surface-mountable. Thermal characteristics include a maximum power dissipation of 2.0W at 25°C (1.3W at 70°C) and a junction-to-ambient thermal resistance of 62.5°C/W. The operating junction temperature range is -55°C to 150°C.
The IRF7325 is suitable for load switching, power management, and battery protection circuits where dual P-channel MOSFETs are required. It is available in tape and reel packaging for automated assembly.
| Qty | Low | High |
|---|---|---|
| 95+ | $1.81 | $1.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -12V.
The IRF7325 is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The junction and storage temperature range is -55°C to 150°C.
The IRF7325 is listed as RoHS3 Compliant, but this status is unverified. Please confirm with the manufacturer.
At VGS = -4.5V, Rds(on) is 24mΩ; at -2.5V, 33mΩ; at -1.8V, 49mΩ.
Continuous drain current is -7.8A at 25°C and -6.2A at 70°C.
Gate threshold voltage ranges from -0.40V to -0.90V at ID = -250µA.