| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37,020 pcs
|
37020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,500 pcs
|
6500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF7324TRPBF is a dual P-Channel MOSFET manufactured by Infineon Technologies, utilizing advanced trench HEXFET technology to achieve ultra-low on-resistance per silicon area. This device is designed for battery and load management applications, offering a logic level gate that enables operation at 2.5V drive voltages. Key electrical specifications include a maximum drain-source voltage of -20V, continuous drain current of -9.0A at 25°C, and a maximum on-resistance of 18mOhm at VGS = -4.5V. The MOSFET also features fast switching times with typical turn-on delay of 17ns and fall time of 190ns, along with low gate charge (63nC total).
The device is housed in a compact 8-SOIC surface mount package with a low profile of less than 1.1mm, making it suitable for space-constrained designs. It is rated for operating temperatures from -55°C to 150°C junction temperature, with a maximum power dissipation of 2.0W at 25°C. The part is lead-free and is supplied in tape and reel packaging.
Typical applications include power management in portable electronics, DC-DC converters, and load switching circuits. The dual-channel configuration allows for efficient use of board space in applications requiring two independent P-Channel MOSFETs.
-55°C to 150°C (junction temperature).
8-SOIC (0.154", 3.90mm width) surface mount package.
RoHS3 compliant (unverified). Datasheet states lead-free.
-20V maximum.
-9.0A at 25°C, -7.1A at 70°C.
18mOhm maximum at VGS=-4.5V, ID=-9.0A; 26mOhm typical at VGS=-2.5V, ID=-7.0A.
-0.45V to -1.0V.