| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,544 pcs
|
3544 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| FET Feature | |
| FET Type | |
| Operating Voltage | |
| Package / Case | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Vgs(th) (Max) @ Id |
The IRF7324D1TR is a P-Channel Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) manufactured by International Rectifier. This component is designed for various electronic applications requiring efficient switching and amplification.
Key electrical characteristics include an operating voltage of 20V and a continuous drain current of 2.2A at 25°C. The Rds On is specified at a maximum of 270 mOhm at 1.2A and 4.5V Vgs. The gate threshold voltage (Vgs(th)) is a maximum of 700mV at 250µA, and the gate charge (Qg) is 7.8nC at 4.5V Vgs. The device also features an isolated diode.
This MOSFET is housed in an 8-SOIC package, suitable for surface-mount applications. It is supplied on tape and reel for automated assembly processes. The maximum power dissipation is rated at 2W.
This part belongs to the FETKY™ series and is categorized under Discrete Semiconductor Products, specifically within Transistors - FETs, MOSFETs - Arrays.
20V.
8-SOIC.
2.2A at 25°C.
270mOhm at 1.2A, 4.5V.
700mV at 250µA.
7.8nC at 4.5V.
2W.