| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,544 pcs
|
3544 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| FET Feature | |
| FET Type | |
| Operating Voltage | |
| Package / Case | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Vgs(th) (Max) @ Id |
The IRF7324D1TR from International Rectifier (IOR) is a P-Channel Metal Oxide MOSFET designed for discrete semiconductor applications. It operates at up to 20V and can handle a continuous drain current of 2.2A at 25°C. The MOSFET exhibits a maximum drain-source on-resistance (Rds On) of 270 mOhm when tested at 1.2A and 4.5V gate-source voltage. Its gate threshold voltage (Vgs(th)) is a maximum of 700mV at 250µA, and it has a typical gate charge (Qg) of 7.8nC at 4.5V. The device has a maximum power dissipation of 2W.
This component is housed in an 8-SOIC package and is supplied on tape and reel (TR). The FET features an isolated diode, making it suitable for various switching and amplification circuits where a P-Channel MOSFET is required. Its specifications make it a viable option for power management and signal control in electronic designs.
20V.
8-SOIC.
2.2A.
270 mOhm.
700mV at 250µA.
7.8 nC.
2W.