| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Height | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF7324 is a dual P-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a maximum drain-source voltage of -20V and continuous drain current of -9.0A at 25°C. The device offers ultra low on-resistance of 0.018Ω at VGS = -4.5V, making it suitable for battery and load management applications. It is designed with trench technology for improved efficiency. The MOSFET is logic level gate rated, allowing direct drive from low voltage logic. It comes in an 8-SOIC surface mount package with a low profile of less than 1.1mm. The operating temperature range is -55°C to 150°C. The device is available in tape and reel packaging. Typical applications include power management in portable electronics, load switching, and battery protection circuits.
| Qty | Low | High |
|---|---|---|
| 95+ | $2.31 | $2.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20 V
-9.0 A at 25°C, -7.1 A at 70°C
0.018 Ω at VGS=-4.5V, 0.026 Ω at VGS=-2.5V
-55°C to 150°C
8-SOIC (0.154", 3.90mm Width) surface mount package
It is listed as RoHS3 Compliant, but this is unverified.
-0.45 V to -1.0 V