| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,996 pcs
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3996 pcs | On Request | 1 | On Request | On Request | 0238 | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRF7322D1TR is a P-Channel MOSFET from Infineon Technologies, part of the FETKY family co-packaged with a Schottky diode. It features a drain-source breakdown voltage of -20V and a continuous drain current of -5.3A at 25°C. The on-resistance is typically 49mΩ at VGS = -4.5V, with a maximum of 62mΩ. The gate threshold voltage is -0.70V minimum, enabling low-voltage drive.
This device is designed for buck regulator applications and power management in portable electronics. It offers low gate charge (19nC typical) and fast switching with rise/fall times around 40-49ns. The integrated Schottky diode provides a low forward voltage drop of 0.39V, improving efficiency in synchronous rectification.
The MOSFET is housed in an 8-SOIC surface mount package (0.154\", 3.90mm width) with a maximum power dissipation of 2.0W at 25°C ambient. Operating junction temperature range is -55°C to +150°C, with a thermal resistance of 62.5°C/W when mounted on FR-4 board.
-20V (minimum).
8-SOIC (0.154\", 3.90mm Width) surface mount package.
-55°C to 150°C (junction).
RoHS3 Compliant (unverified).
62mΩ maximum (49mΩ typical).
-0.70V minimum.
-5.3A at 25°C ambient.