| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
16 pcs
|
16 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF7319PBF is a dual N and P-Channel MOSFET array designed for efficient power management in space-constrained applications. It features a drain-to-source voltage rating of 30V and a maximum on-resistance of 29mOhm at 5.8A and 10V gate drive. The device offers a maximum gate charge of 33nC at 10V and an input capacitance of 650pF at 25V, enabling fast switching with low drive requirements.
This MOSFET is housed in an industry-standard 8-SOIC (0.154", 3.90mm Width) surface mount package with a supplier device package of 8-SO. It supports an operating junction temperature range of -55°C to 150°C and has a power dissipation rating of 2W. The complementary N and P-Channel configuration simplifies circuit design for half-bridge and push-pull topologies.
Typical applications include DC-DC converters, power management in portable electronics, and motor drive circuits where both high-side and low-side switching are required. The surface mount package is suitable for automated assembly processes.
30V.
29mOhm at Id=5.8A and Vgs=10V.
33nC maximum at Vgs=10V.
-55°C to 150°C (junction).
8-SOIC (0.154", 3.90mm Width) surface mount package.
RoHS3 compliant (unverified).
650pF maximum at Vds=25V.