Mfr Part #:

IRF7317

Mfr Name: Vishay

The Vishay Dale IRF7317 is a Dual N/P-Channel MOSFET designed for efficiency and reliability. It offers a 20V breakdown voltage and low on-resistance.

✓ Total Stock: 1,315 pcs

$ Price Range: $0.71

IRF7317 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	1,100 pcs On Request	1100 pcs	On Request	1	On Request	On Request	0241+	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	215 pcs On Request	215 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRF7317 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Vishay
Input Capacitance	900pF
Mounting Type	Surface Mount

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IRF7317 Description

Short technical summary and product information.

The IRF7317 from Vishay Dale is a Fifth Generation HEXFET Power MOSFET featuring both N-Channel and P-Channel configurations within a single SO-8 package. This dual-channel design utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, combined with fast switching speeds and a ruggedized device design. It is suitable for a wide variety of power applications.

Key electrical specifications include a Drain-Source Voltage of 20V for the N-Channel and -20V for the P-Channel. The on-resistance (RDS(on)) is as low as 0.029 Ohms for the N-Channel at VGS = 4.5V, ID = 6.0A, and 0.058 Ohms for the P-Channel at VGS = -4.5V, ID = -2.9A. The device operates with a Gate-Source Voltage range of ±12V and features a typical threshold voltage of 0.7V for the N-Channel and -0.7V for the P-Channel.

The IRF7317 is designed for surface mounting in an SOIC package, which has been modified with a customized leadframe for enhanced thermal characteristics and multiple-die capability. This makes it ideal for power applications where reduced board space is a consideration. The package is designed for standard soldering techniques like vapor phase, infra red, or wave soldering.

IRF7317 Quick Information

Product Type: MOSFET

Series: Fifth Generation

Canonical Name: IRF7317 Dual N/P-Channel HEXFET Power MOSFET

Subcategory: Dual N/P-Channel

IRF7317 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IRF7317 Estimated Pricing

Qty	Low	High
1+	$0.71	$0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7317 Features

Dual N and P Channel MOSFET.
Ultra low on-resistance.
20V Drain-Source Breakdown Voltage.
Surface mount SOIC package.
Fully avalanche rated.

IRF7317 Applications

Suitable for power switching in consumer electronics.
Used in motor control and automation systems.
Ideal for high-speed switching in power supplies.
Applicable in automotive and industrial power circuits.

IRF7317 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the Drain-Source Breakdown Voltage for the N-Channel?

The Drain-Source Breakdown Voltage for the N-Channel is 20V.

What is the typical On-Resistance for the N-Channel?

The typical On-Resistance for the N-Channel is 0.027 Ohm.

What is the typical On-Resistance for the P-Channel?

The typical On-Resistance for the P-Channel is 0.058 Ohm.

What is the maximum Gate-Source Voltage?

The maximum Gate-Source Voltage is ±12V.

What is the operating temperature range?

The operating temperature range is -55 to 150°C.

What type of package is the IRF7317 in?

The IRF7317 is in an SOIC package.

How is the IRF7317 mounted?

The IRF7317 is designed for surface mounting.