| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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35,671 pcs
|
35671 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
4,030 pcs
|
4030 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,505 pcs
|
3505 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
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The Infineon IRF7316TRPBF is a P-Channel power MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 30V and a maximum continuous drain current of 4.9A. The MOSFET has a low maximum drain-source on-resistance of 98mΩ, contributing to efficient operation.
This device is housed in an 8-pin SOIC surface mount package, with dimensions of 5mm in length and 1.5mm in height, making it suitable for space-constrained designs. The operating temperature range is from -55°C to 150°C, providing robustness in different environments. The typical gate charge is 23nC at Vgs=10V.
Infineon's HEXFET power MOSFETs are known for their performance and efficiency. This P-channel device, with its isolated configuration, offers design flexibility. It is part of Infineon's comprehensive portfolio of MOSFETs, including families like CoolMOS and OptiMOS, aimed at delivering high efficiency and power density.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 4.9A.
The maximum drain-source voltage is 30V.
The operating temperature range is from -55°C to 150°C.
It is supplied in an 8-pin SOIC surface mount package.
The channel type is P-Channel.