| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,020 pcs
|
9020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF7316TRPBF is a dual P-Channel MOSFET from Infineon Technologies, designed for surface mount applications. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 4.9A. The device offers a maximum on-resistance (Rds(on)) of 58mOhm at Id=4.9A and Vgs=10V, with a logic level gate threshold voltage of 1V at 250µA.
This MOSFET is housed in an 8-SOIC package (0.154", 3.90mm Width) with a supplier device package of 8-SO. It supports a maximum power dissipation of 2W and operates over a junction temperature range of -55°C to 150°C. The gate charge is 34nC at 10V, and input capacitance is 710pF at Vds=25V.
The dual P-Channel configuration makes it suitable for load switching, power management, and other applications requiring two independent P-Channel MOSFETs in a compact package. The logic level gate allows direct drive from low-voltage logic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.32 | $1.32 |
| 10+ | $0.83 | $0.83 |
| 50+ | $0.62 | $0.62 |
| 100+ | $0.55 | $0.55 |
| 500+ | $0.43 | $0.43 |
| 4,000+ | $0.34 | $0.34 |
| 12,000+ | $0.31 | $0.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
4.9A.
Maximum 58mOhm at Id=4.9A, Vgs=10V.
Maximum 1V at Id=250µA.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C (junction).
RoHS3 compliant (unverified).