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IRF7316PBF IRF7316PBF is a dual P-Channel MOSFET from Infineon Technologies. It features 30V drain-source voltage, 4.9A continuous drain current, and 58mOhm on-resistance in an 8-SOIC package.
Mfr Part #:

IRF7316PBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRF7316PBF is a dual P-Channel MOSFET from Infineon Technologies. It features 30V drain-source voltage, 4.9A continuous drain current, and 58mOhm on-resistance in an 8-SOIC package.
✓ Total Stock: 3,601 pcs

IRF7316PBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,600 pcs
On Request
3600 pcs On Request 1 On Request On Request On Request On Request On Request
HMB Electronics LLC ✓
Non-Authorised Inventory information
1 pcs
On Request
1 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRF7316PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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IRF7316PBF Description

Short technical summary and product information.

The IRF7316PBF is a dual P-Channel MOSFET by Infineon Technologies, utilizing metal-oxide semiconductor technology. Each MOSFET has a logic level gate, allowing direct drive from low-voltage logic. The device is rated for a maximum drain-source voltage of 30V and a continuous drain current of 4.9A. On-resistance is 58mOhm maximum at 4.9A and 10V Vgs, with a gate threshold voltage of 1V maximum at 250µA. Gate charge is 34nC maximum at 10V, and input capacitance is 710pF maximum at 25V Vds. Power dissipation is 2W maximum. The operating temperature range spans -55°C to 150°C. The device is housed in an 8-SOIC surface mount package (0.154" width, 3.90mm width, supplier package 8-SO). It is suitable for load switching, power management, and battery protection applications in portable electronics and other compact systems.

IRF7316PBF Quick Information

Product Type: Dual P-Channel MOSFET
Canonical Name: IRF7316PBF Infineon Technologies Dual P-Channel MOSFET 30V 4.9A 8-SOIC
Subcategory: Dual P-Channel

IRF7316PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRF7316PBF Features

  • Dual P-Channel MOSFET configuration.
  • Logic level gate for low voltage drive.
  • 30V drain-source voltage rating.
  • 4.9A continuous drain current.
  • Surface mount 8-SOIC package.

IRF7316PBF Applications

  • Load switching in portable devices.
  • Battery protection circuits.
  • Power management in compact systems.
  • DC-DC converter applications.

IRF7316PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRF7316PBF?

30V.

What is the continuous drain current rating?

4.9A.

What is the on-resistance?

58mOhm maximum at 4.9A and 10V Vgs.

What is the gate threshold voltage?

1V maximum at 250µA.

What is the operating temperature range?

-55°C to 150°C.

What package does the IRF7316PBF come in?

8-SOIC (0.154", 3.90mm Width).

Is the IRF7316PBF RoHS compliant?

Yes, RoHS3 compliant (unverified low confidence).

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