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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon Technologies IRF7316 is a P-channel HEXFET Power MOSFET designed for efficiency and reliability. It utilizes advanced processing for extremely low on-resistance per silicon area, combined with fast switching speeds.
Key electrical specifications include a Drain-Source Voltage (VDS) of -30V and a Gate-Source Voltage (VGS) of ±20V. The on-resistance (RDS(on)) is as low as 0.058 Ohms at a test condition of VGS = -10V and ID = -4.9A. Continuous drain current is rated at -4.9A at 25°C ambient temperature.
This device is housed in an SO-8 package, modified with a customized leadframe for enhanced thermal characteristics. It is suitable for vapor phase, infra red, or wave soldering techniques, making it ideal for various power applications where reduced board space is beneficial.
The IRF7316 is fully avalanche rated, offering ruggedized device design for reliable operation in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30V
-4.9A at TA=25°C, -3.9A at TA=70°C
0.058Ω maximum at VGS=-10V, ID=-4.9A; 0.098Ω maximum at VGS=-4.5V, ID=-3.6A
SO-8 surface-mount package
-55°C to +150°C junction and storage temperature range
-1.0V maximum