| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,543 pcs
|
1543 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF7314TRPBF is a dual P-Channel MOSFET from Infineon Technologies, configured as two independent P-Channel MOSFETs in a single 8-SOIC package. It features a maximum drain-to-source voltage of 20V and a continuous drain current rating of 5.3A.
Key electrical characteristics include a maximum on-resistance of 58mOhm at Vgs=4.5V and Id=2.9A, a maximum gate charge of 29nC at Vgs=4.5V, and an input capacitance of 780pF at Vds=15V. The device features a logic level gate, allowing operation at lower gate voltages.
The MOSFET is designed for surface mount assembly in an 8-SOIC (0.154", 3.90mm Width) package, with a supplier device package of 8-SO. It can dissipate up to 2W of power and operates over a junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 4,000+ | $0.36 | $0.36 |
| 8,000+ | $0.34 | $0.34 |
| 12,000+ | $0.32 | $0.32 |
| 28,000+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C (junction).
RoHS3 compliant (unverified).
2 P-Channel (Dual).
20V.
5.3A.
700mV at Id=250µA.