| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
39 pcs
|
39 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
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| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
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| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs(th) (Max) @ Id |
The IRF7314PBF is a dual P-Channel power MOSFET from Infineon Technologies, designed for surface mount applications. It features two independent P-Channel MOSFETs in a single 8-SOIC package, each capable of handling up to 20V drain-to-source voltage and 5.3A continuous drain current. The device offers a maximum on-resistance of 58mOhm at 2.9A and 4.5V gate drive, making it suitable for load switching and power management circuits.
With a logic level gate threshold of 700mV maximum, the IRF7314PBF can be driven directly by low-voltage logic. The gate charge is 29nC at 4.5V, and input capacitance is 780pF at 15V, enabling efficient switching in moderate frequency applications. The device operates over a junction temperature range of -55°C to 150°C and dissipates up to 2W.
The IRF7314PBF is housed in an industry-standard 8-SOIC package (0.154" width, 3.90mm body) and is supplied in tape and reel for automated assembly. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited).
20V
5.3A
58mOhm maximum at 2.9A and 4.5V gate drive
8-SOIC (0.154", 3.90mm width)
-55°C to 150°C (junction)
RoHS3 Compliant (unverified)