| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRF7313QTRPBF is a dual N-Channel MOSFET from Infineon Technologies, designed for a variety of power management and switching applications. It features a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current rating of 6.5A. The device offers a low on-resistance of 29 mOhm maximum at a gate-source voltage of 10V and a drain current of 5.8A, enabling efficient power handling.
The MOSFET has a gate charge of 33 nC maximum at 10V, which allows for fast switching performance. The input capacitance is 650 pF maximum at 25V. The maximum gate threshold voltage is 1V at 250 µA drain current. The device is rated for a maximum power dissipation of 2W.
The IRF7313QTRPBF is housed in an industry-standard 8-SOIC surface mount package (8-SO), with a body width of 3.90mm. It is suitable for automated assembly processes. The part is listed as RoHS3 compliant, MSL level 1, and REACH unaffected, though these compliance statuses are unverified.
30V.
6.5A.
8-SOIC (8-SO) surface mount package.
29mOhm maximum at 5.8A drain current and 10V gate-source voltage.
33nC maximum at 10V gate-source voltage.
2W maximum.
Listed as RoHS3 Compliant, but this status is unverified.