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IRF7311TRPBF Dual N-Channel 20V 6.6A MOSFET in 8-SOIC package. Logic level gate, 29mOhm Rds(on) at 4.5V.
Mfr Part #:

IRF7311TRPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Dual N-Channel 20V 6.6A MOSFET in 8-SOIC package. Logic level gate, 29mOhm Rds(on) at 4.5V.
✓ Total Stock: 380 pcs
$ Price Range: $0.67 - $0.80

IRF7311TRPBF Available from 1 distributor

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✓ Non-Authorised
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380 pcs
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IRF7311TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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IRF7311TRPBF Description

Short technical summary and product information.

The IRF7311TRPBF is a dual N-Channel enhancement mode power MOSFET from Infineon Technologies, housed in a compact 8-SOIC surface mount package. It features a drain-to-source voltage (Vdss) of 20V and a continuous drain current rating of 6.6A. The device offers a maximum on-resistance (Rds(on)) of 29mOhm at a gate-source voltage of 4.5V and a drain current of 6.6A, making it suitable for low-voltage power switching applications.

 

This MOSFET incorporates logic level gate technology, allowing it to be driven directly from low-voltage logic circuits without requiring additional gate drive circuitry. The maximum gate threshold voltage (Vgs(th)) is 700mV at 250µA drain current. The device is designed for efficient power management in space-constrained designs.

 

The IRF7311TRPBF is supplied in an 8-SOIC (0.154", 3.90mm Width) surface mount package, suitable for automated assembly processes. It is rated for operation over a junction temperature range of -55°C to +150°C, with a maximum power dissipation of 2W.

IRF7311TRPBF Quick Information

Product Type: MOSFET Array
Canonical Name: IRF7311TRPBF — Dual N-Channel 20V 6.6A MOSFET, 8-SOIC
Subcategory: Dual N-Channel MOSFET Array

IRF7311TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRF7311TRPBF Estimated Pricing

Qty Low High
1+ $0.80 $0.80
10+ $0.70 $0.70
100+ $0.67 $0.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IRF7311TRPBF Features

  • Dual N-Channel 20V 6.6A MOSFET array.
  • Logic level gate for low-voltage drive.
  • 29mOhm maximum on-resistance at 4.5V.
  • Surface mount 8-SOIC package.
  • Wide -55°C to +150°C operating range.

IRF7311TRPBF Applications

  • Low-voltage power switching circuits.
  • DC-DC converter load switches.
  • Battery management and protection.
  • Power distribution in portable devices.

IRF7311TRPBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage (Vdss) of the IRF7311TRPBF?

The maximum drain-to-source voltage (Vdss) is 20V.

What is the continuous drain current rating of the IRF7311TRPBF?

The continuous drain current rating is 6.6A.

What is the maximum on-resistance (Rds(on)) of the IRF7311TRPBF?

The maximum on-resistance is 29mOhm at Vgs=4.5V and Id=6.6A.

What package does the IRF7311TRPBF come in?

The IRF7311TRPBF is supplied in an 8-SOIC (0.154", 3.90mm Width) surface mount package.

What is the operating temperature range of the IRF7311TRPBF?

The operating junction temperature range is -55°C to +150°C.

Does the IRF7311TRPBF have a logic level gate?

Yes, it features a logic level gate with a maximum gate threshold voltage (Vgs(th)) of 700mV at 250µA.

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