| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,000 pcs
|
7000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Current | |
| Configuration | |
| Continuous Drain Current (Maximum @ TA=70 °C) | |
| Current | |
| Diode Forward Voltage | |
| Drain Source On Resistance (Maximum @ ID=5.2 A, VGS=2.7 V) | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source Breakdown Voltage | |
| FET Feature | |
| Forward Transconductance | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-Source Voltage | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Peak Diode Recovery dv/dt | |
| Power | |
| Power Dissipation (Maximum @ TA=70 °C) | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Repetitive Avalanche Energy | |
| Reverse Recovery Charge | |
| Reverse Recovery Time | |
| Single Pulse Avalanche Energy | |
| Supplier Device Package | |
| Technology | |
| Thermal Resistance Junction-to-Ambient | |
| Vgs(th) (Max) @ Id |
The IRF7311TR is a dual N-Channel MOSFET from Infineon Technologies, utilizing advanced HEXFET® technology. It is designed for surface-mount applications requiring efficient power management in a compact SO-8 package.
Key electrical specifications include a maximum drain-source voltage of 20 V and a continuous drain current of 6.6 A at 25°C. The device features a logic-level gate threshold, enabling direct drive from low-voltage logic. On-resistance is typically 29 mΩ at VGS=4.5V, minimizing conduction losses. The MOSFET is fully avalanche rated with a single pulse avalanche energy of 100 mJ.
The IRF7311TR is housed in an 8-SOIC package with a customized leadframe for enhanced thermal performance. It supports junction temperatures from -55°C to 150°C. The dual configuration saves board space by integrating two independent MOSFETs in one package.
Typical applications include power management in portable electronics, load switching, and DC-DC converter circuits. The device is RoHS compliant and has a moisture sensitivity level of 1.
| Qty | Low | High |
|---|---|---|
| 4,000+ | $0.90 | $0.90 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20 V.
8-SOIC (0.154", 3.90mm Width).
-55°C to 150°C (junction).
RoHS3 Compliant (unverified, low confidence).
Maximum 29 mΩ at VGS=4.5V and ID=6A.
6.6 A at 25°C, 5.3 A at 70°C.
Dual N-Channel (two independent MOSFETs in one package).