| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,500 pcs
|
3500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
IRF731 is an N-Channel power MOSFET manufactured by Harris Semiconductor. The device is rated for a maximum drain-to-source voltage of 350 V and a continuous drain current of 5.5 A at case temperature. Maximum on-resistance is 1 Ohm at a drain current of 3 A and a gate-source voltage of 10 V.
Gate drive characteristics include a maximum gate-source voltage of ±20 V and a 10 V drive voltage for rated on-resistance. Total gate charge is 35 nC at Vgs = 10 V, while input capacitance is 600 pF at Vds = 25 V. Maximum power dissipation is 75 W at case temperature, with an operating junction temperature range of -55°C to +150°C.
The IRF731 is supplied in a TO-220-3 through-hole package (TO-220AB) and is intended for discrete power switching applications. The through-hole mounting allows straightforward board assembly and heatsinking in medium-power designs.
| Qty | Low | High |
|---|---|---|
| 178+ | $1.69 | $1.69 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
350 V.
Through-hole TO-220-3 (TO-220AB).
-55°C to +150°C (junction temperature).
RoHS3 compliant per current supplier data; not independently verified.
5.5 A at case temperature (Tc).
1 Ohm at Id=3A and Vgs=10V.
±20 V.