| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
327 pcs
|
327 pcs | On Request | 1 | On Request | On Request | 1103 | On Request | On Request |
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The IRF7309PBF is a complementary MOSFET array from Infineon Technologies, combining N-channel and P-channel MOSFETs in a single 8-SOIC surface mount package. This device is designed for applications requiring both high-side and low-side switching, such as DC-DC converters, power management, and motor control circuits. The N-channel MOSFET supports a maximum drain current of 4A, while the P-channel handles 3A, with a common drain-source voltage rating of 30V. The on-resistance is specified at 50mΩ maximum for the N-channel at 2.4A and 10V gate drive. The device features a gate threshold voltage of 1V maximum at 250µA, enabling low-voltage logic level control. Input capacitance is 520pF at 15V, and total gate charge is 25nC at 4.5V, allowing efficient switching. The MOSFETs are housed in an 8-SOIC package with gull wing leads for surface mount assembly. The operating temperature range is -55°C to 150°C, with a maximum power dissipation of 1.4W. The device is RoHS3 compliant and REACH unaffected, with a moisture sensitivity level of 1. This part is suitable for compact designs where board space is limited and complementary switching is required.
30V.
8-SOIC (0.154", 3.90mm Width) surface mount.
-55°C to 150°C (TJ).
RoHS3 Compliant (unverified).
4A for N-channel, 3A for P-channel.
50mΩ maximum at 2.4A and 10V.
1V maximum at 250µA.