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IRF7309PBF Complementary N and P-Channel MOSFET array from Infineon Technologies. Rated for 30V drain-source voltage, 4A (N-Channel) and 3A (P-Channel) continuous drain current, with 50mΩ on-resistance at 10V.
Mfr Part #:

IRF7309PBF

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Complementary N and P-Channel MOSFET array from Infineon Technologies. Rated for 30V drain-source voltage, 4A (N-Channel) and 3A (P-Channel) continuous drain current, with 50mΩ on-resistance at 10V.
Total Stock: 3,927 pcs

IRF7309PBF Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
327 pcs
327 pcs On Request 1 On Request On Request 1103 On Request On Request

IRF7309PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Style
Vgs(th) (Max) @ Id

IRF7309PBF Description

Short technical summary and product information.

The IRF7309PBF is a complementary MOSFET array from Infineon Technologies, combining N-channel and P-channel MOSFETs in a single 8-SOIC surface mount package. This device is designed for applications requiring both high-side and low-side switching, such as DC-DC converters, power management, and motor control circuits. The N-channel MOSFET supports a maximum drain current of 4A, while the P-channel handles 3A, with a common drain-source voltage rating of 30V. The on-resistance is specified at 50mΩ maximum for the N-channel at 2.4A and 10V gate drive. The device features a gate threshold voltage of 1V maximum at 250µA, enabling low-voltage logic level control. Input capacitance is 520pF at 15V, and total gate charge is 25nC at 4.5V, allowing efficient switching. The MOSFETs are housed in an 8-SOIC package with gull wing leads for surface mount assembly. The operating temperature range is -55°C to 150°C, with a maximum power dissipation of 1.4W. The device is RoHS3 compliant and REACH unaffected, with a moisture sensitivity level of 1. This part is suitable for compact designs where board space is limited and complementary switching is required.

IRF7309PBF Quick Information

Product Type: MOSFET Array
Canonical Name: IRF7309PBF Complementary N and P-Channel MOSFET, 30V, 4A/3A, Surface Mount, 8-SOIC
Subcategory: Arrays

IRF7309PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRF7309PBF Features

  • Complementary N and P-channel MOSFET in one package.
  • Rated for 30V drain-source voltage.
  • Supports 4A N-channel and 3A P-channel currents.
  • Surface mount 8-SOIC package for compact designs.
  • Low gate threshold voltage for logic level control.

IRF7309PBF Applications

  • Ideal for DC-DC converter circuits.
  • Used in power management for portable devices.
  • Suitable for motor control H-bridge drivers.
  • Can be used in load switching applications.

IRF7309PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRF7309PBF?

30V.

What is the package type of the IRF7309PBF?

8-SOIC (0.154", 3.90mm Width) surface mount.

What is the operating temperature range?

-55°C to 150°C (TJ).

Is the IRF7309PBF RoHS compliant?

RoHS3 Compliant (unverified).

What are the continuous drain current ratings?

4A for N-channel, 3A for P-channel.

What is the on-resistance of the N-channel MOSFET?

50mΩ maximum at 2.4A and 10V.

What is the gate threshold voltage?

1V maximum at 250µA.

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