| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IRF7306PBF is a dual P-Channel MOSFET manufactured by Infineon Technologies. It is designed for automotive applications as indicated by its HEXFET technology. The device features a drain-source voltage rating of 30V and a continuous drain current of 3.6A. The maximum on-resistance is 100mOhm at 1.8A and 10V gate drive. It has a logic level gate threshold voltage of 1V maximum at 250µA, allowing it to be driven by low-voltage logic. The gate charge is 25nC at 10V, and input capacitance is 440pF at 25V. The device is housed in an 8-SOIC surface mount package with a supplier device package of 8-SO. It operates over a temperature range of -55°C to 150°C. The dual configuration makes it suitable for applications requiring two P-Channel MOSFETs in a single package, such as load switching, power management, and DC-DC converters. The logic level gate feature simplifies drive circuitry.
30V.
3.6A.
100mOhm maximum at 1.8A and 10V.
8-SOIC (0.154", 3.90mm Width).
-55°C to 150°C.
Yes, RoHS3 compliant (unverified).
1V maximum at 250µA.