| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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874 pcs
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874 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request | |
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449 pcs
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449 pcs | On Request | 1 | On Request | On Request | 0810P//A/ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The IRF7303TRPBF from Vishay Dale is a high-performance N-Channel Power MOSFET. It features a maximum drain-source voltage of 30V and a continuous drain current of 4.9A. The MOSFET has a low on-resistance (Rds(on)) of 50 mOhm at 2.4A and 10V gate-source voltage, ensuring efficient power transfer.
This component operates within a temperature range of -55°C to 150°C and has a power dissipation of 2W. It is housed in a surface-mount SOIC package, making it suitable for compact designs. The MOSFET is designed with an enhancement channel mode and has a gate-source voltage threshold of 1V at 250µA.
Key electrical characteristics include a gate charge of 25nC at 10V, typical rise time of 21 ns, typical fall time of 7.7 ns, typical turn-on delay of 6.8 ns, and typical turn-off delay of 22 ns. The IRF7303TRPBF is a reliable choice for power switching and amplification applications requiring robust performance and a small footprint.
30V
4.9A
-55°C to 150°C
50 mOhm at 2.4A, 10V
Maximum 1V at 250 µA
SOIC surface mount package
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