| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The IRF7303PBF is a dual N-Channel MOSFET array manufactured by Infineon Technologies. It features a drain-source voltage rating of 30V and a continuous drain current of 4.9A. The on-resistance is 50mOhm maximum at a gate-source voltage of 10V and drain current of 2.4A. The device has a maximum gate charge of 25nC at 10V and an input capacitance of 520pF at 25V drain-source voltage. The gate threshold voltage is 1V maximum at 250µA drain current. Power dissipation is rated at 2W. The operating temperature range is -55°C to 150°C. The MOSFET is housed in a surface-mount 8-SOIC package (0.154" width, 3.90mm width) with a supplier device package of 8-SO. This dual MOSFET array is suitable for various switching and power management applications where two independent N-channel MOSFETs are required in a compact footprint. Common applications include DC-DC converters, load switches, and motor control circuits.
30V.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C.
Yes, it is listed as RoHS3 Compliant, but this status is unverified.
4.9A.
50mOhm maximum at Vgs=10V and Id=2.4A.
1V maximum at Id=250µA.